'l (/ iiu ioaucii, one.. vn0109 n-channel enhancement-mode vertical dmos fet features '" free from secondary breakdown ?> low power drive requirement ? ease of paralleling *? low ciss and fast switching speeds * excellent thermal stability *? integral source-drain diode *? high input impedance and high gain applications motor controls converters amplifiers switches power supply circuits drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) ordering information device vn0109 package to-92 VN0109N3- wafer / die options nw (die in wafer form) vn1509nw (die on adhesive tape) vn1509nj nd (die in waffle pack) vn1509nd product summary pin configuration source absolute maximum ratings parameter value drain-to-source voltage drain-to-gate voltage gate-to-source voltage operating and storage temperature bvdss bvdgs 20v -55cto+150c drain gate to-92 (n3) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
vn0109 thermal characteristics package to-92 (continuous)' 350 id power dissipation (pulsed) @tr = 25c (a) (w) 2.0 1.0 125 170 350 2.0 notes: t id (continuous) is limited by max rated t . electrical characteristics \ 2sc unless otherwise specified) sym bvdss gs(th) gs(th) 'gss 'dss d(on) r ds(on) ar "^dsion) gps giss coss crss d(on) *r ^(off) t, vsd t, parameter drain-to-source breakdown voltage gate threshold voltage change in vgs(th) with temperature gate body leakage zero gate voltage drain current on-state drain current static drain-to-source on-state resistance change in rds(on) with temperature forward transductance input capacitance common source output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time diode forward voltage drop reverse recovery time min 90 0.8 - - - - 0.5 2.0 - - - 300 - - - - - - - - typ - - -3.8 - - - 1.0 2.5 3.0 2.5 0.70 450 55 20 5.0 3.0 5.0 6.0 5.0 1.2 400 max units conditions - 2.4 -5.5 100 1.0 100 - - 5.0 3.0 1.0 65 25 8.0 5.0 8.0 9.0 8.0 1.8 - v v mv/c na ua a q %/c mmho pf ns v ns vgs = ov,id= 1.0ma vgs = vds,id= 1.0ma vg8 = vd8,id= 1.0ma vgs = 20v,vds = ov vgs = 0v, vds = max rating vds = 0.8 max rating, vgs = ov, ta=125c vgs = 5.0v, vds = 25v vgs = 10v,vds = 25v vqs = 5.0v, id = 250ma vgs = 10v,id = 1.0a vgs = 10v, id = 1.0a vds = 25v, id = 500ma vgs = 0v, vds = 25v, f= 1.0mhz vdd = 25v, id=1.0a, rgen = 25q vos = ov,isd = 1.0a vgs = ov.isd = 1.0a notes: 1. all d. c. parameters 100% tested at 25c unless otherwise stated. 2. aiia.c. parameters sample tested. switching waveforms and test circuit (pulse test: 300/vs pulse, 2% duty cycle.) ? 90% input vdd output 0v 10% j w , , - 'i" 10% "\' x 'v?-??.,( i wh w, t, '~ 90/ pulse generator output .i-''' d.u.t.
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